AON7405 30v p-channel mosfet general description product summary v ds i d (at v gs = -10v) -50a r ds(on) (at v gs = -10v) < 6.2m w r ds(on) (at v gs = -6v) < 8.9m w 100% uis tested 100% r g tested symbol v ds v gs i dm i ar , i as e ar , e as t j , t stg symbol t 10s steady-state steady-state r q jc thermal characteristics -30v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 55 1.5 power dissipation b w power dissipation a p dsm w t a =70c 83 4 t a =25c a t a =70c -25 i d -50 -39 t c =25c t c =100c a -44 a v 25 gate-source voltage continuous drain current g t a =25c i dsm the AON7405 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is ideal for load switch and battery pr otection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage -30 maximum junction-to-ambient a c/w r q ja 16 45 20 c -210 pulsed drain current c units repetitive avalanche energy l=0.1mh c mj avalanche current c -20 continuous drain current 97 parameter typ max t c =25c 6.25 33 t c =100c junction and storage temperature range -55 to 150 p d dfn 3.3x3.3 ep top view bottom pin 1 top view 1 2 3 4 8 7 6 5 g ds rev 1: feb 2010 www.aosmd.com page 1 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
AON7405 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.7 -2.2 -2.8 v i d(on) -210 a 5.1 6.2 t j =125c 7.6 9.2 v gs =-6v, id=-20a 7.1 8.9 m w 10.7 m w g fs 46 s v sd -0.7 -1 v i s -50 a c iss 1960 2450 2940 pf c oss 380 550 720 pf c rss 220 370 520 pf r g 7 14 28 w q g (10v) 33 42 51 nc q g (4.5v) 16 21 26 nc q gs 5.5 7 8.5 nc q gd 7 12 17 nc t d(on) 9.5 ns t r 10 ns t d(off) 104 ns t f 78 ns t rr 20 25 30 ns q rr 37 47 57 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=500a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-4.5v, i d =-10a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =-20a, di/dt=500a/ m s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =0.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev 1: feb 2010 www.aosmd.com page 2 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
AON7405 typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 120 1 2 3 4 5 6 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 3 4 5 6 7 8 9 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-6v i d =-20a v gs =-10v i d =-20a 1 5 9 13 17 21 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-6v v gs =-10v i d =-20a 25c 125c 0 20 40 60 80 100 120 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3.5v -5v -6v,-8v,-10v -4v rev 1: feb 2010 www.aosmd.com page 3 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
AON7405 typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 10 20 30 40 50 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =-15v i d =-20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1ms r q jc =1.5c/w rev 1: feb 2010 www.aosmd.com page 4 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
AON7405 typical electrical and thermal characteristics 17 52 10 0 18 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 100 1000 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) -i ar (a) peak avalanche current 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) -current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r q ja =55c/w rev 1: feb 2010 www.aosmd.com page 5 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
AON7405 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 1: feb 2010 www.aosmd.com page 6 of 6 www.datasheet.co.kr datasheet pdf - http://www..net/
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